Synthesis and characterization of a liquid Eu precursor (EuCppm2) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy
Autor: | Yasuhisa Saitoh, Brandon Mitchell, Dolf Timmerman, Yoshinori Kuboshima, Hironori Ofuchi, Takumi Nunokawa, Shintaro Higashi, Tetsuo Honma, Yasufumi Fujiwara, Kaoru Kikukawa, Atsushi Koizumi, Takayuki Mogi, Ryuta Wakamatsu, Dong-gun Lee |
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Rok vydání: | 2017 |
Předmět: |
Valence (chemistry)
Photoluminescence Vapor pressure Doping Inorganic chemistry Fermi level Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences 0104 chemical sciences Atomic layer deposition symbols.namesake chemistry symbols General Materials Science 0210 nano-technology Europium |
Zdroj: | Materials Chemistry and Physics. 193:140-146 |
ISSN: | 0254-0584 |
DOI: | 10.1016/j.matchemphys.2017.02.021 |
Popis: | A liquid Eu precursor, bis(normal-propyl-tetramethylcyclopentadienyl)europium has been synthesized. This precursor exists as a liquid at temperatures higher than 49 °C, has a moderately high vapor pressure, contains no oxygen in its molecular structure, and can be distilled to high purity. These properties make it ideal for doping using a chemical vapor or atomic layer deposition method, and provide a degree of control previously unavailable. As a precursor the Eu exists in the divalent valance state, however, once doped into GaN by organometallic vapor phase epitaxy, the room-temperature photoluminescence of the Eu-doped GaN exhibited the typical red emission due to the intra-4f shell transition of trivalent Eu. After variation of the growth temperature, it was found that divalent Eu could be stabilized in the GaN matrix. By tuning the Fermi level through donor doping, the ratio of Eu2+ to Eu3+ could be controlled. The change in valence state of the Eu ions was confirmed using X-ray absorption near-edge structure. |
Databáze: | OpenAIRE |
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