Investigation into low‐temperature photoluminescence internal quantum efficiency and defect‐recombination in InGaN light‐emitting diodes

Autor:	Xiaoyan Yi, Xuecheng Wei, Yiping Zeng, Xiaoli Ji, Jun Ma, Ruifei Duan, Fuhua Yang, Junxi Wang, Jinmin Li, Guohong Wang
Rok vydání:	2014
Předmět:	Low temperature photoluminescence Materials science Photoluminescence business.industry law Optoelectronics Quantum efficiency Condensed Matter Physics business Recombination Light-emitting diode law.invention Diode
Zdroj:	physica status solidi c. 11:718-721
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201300479
Popis:	This paper is focused on the temperature-dependence of photoluminescence (PL) internal quantum efficiency (IQE) and defect-recombination in InGaN light-emitting diodes. It is found low-temperature PL-IQE is remarkably lower than 100% for some samples, suggesting the existence of residual defect-recombination under low temperature. Theoretical analysis deduces that defect-recombination cannot be frozen out at low temperature, because it follows T1/2 temperature-dependent defect-capture coefficient without defect-activation energy. The empirical formulas describing temperature-dependence of defect-recombination lifetime and PL-IQE are correspondingly revised. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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