Nano-Scaled Pt/Ag/Ni/Au Contacts on p-type GaN for Low Contact Resistance and High Reflectivity

Autor:	Ko Cg, Ju Ic, Seong Kyu Kim, Seunghyup Yoo, Kang Dh, Myung-Hyun Kim, Kwanwoo Shin, Kwon Yw, Yongseok Choi, Hyokyung Sung
Rok vydání:	2011
Předmět:	Materials science High reflectivity Contact resistance Biomedical Engineering Analytical chemistry Bioengineering General Chemistry Condensed Matter Physics Metal Wavelength visual_art Nano visual_art.visual_art_medium General Materials Science Layer (electronics) Ohmic contact Deposition (law)
Zdroj:	Journal of Nanoscience and Nanotechnology. 11:6157-6161
ISSN:	1533-4899 1533-4880
Popis:	We synthesized the vertical-structured LED (VLED) using nano-scaled Pt between p-type GaN and Ag-based reflector. The metallization scheme on p-type GaN for high reflectance and low was the nano-scaled Pt/Ag/Ni/Au. Nano-scaled Pt (5 A) on Ag/Ni/Au exhibited reasonably high reflectance of 86.2% at the wavelength of 460 nm due to high transmittance of light through nano-scaled Pt (5 A) onto Ag layer. Ohmic behavior of contact metal, Pt/Ag/Ni/Au, to p-type GaN was achieved using surface treatments of p-type GaN prior to the deposition of contact metals and the specific contact resistance was observed with decreasing Pt thickness of 5 A, resulting in 1.5 x 10(-4) ohms cm2. Forward voltages of Pt (5 A)/Ag/Ni contact to p-type GaN showed 4.19 V with the current injection of 350 mA. Output voltages with various thickness of Pt showed the highest value at the smallest thickness of Pt due to its high transmittance of light onto Ag, leading to high reflectance. Our results propose that nano-scaled Pt/Ag/Ni could act as a promising contact metal to p-type GaN for improving the performance of VLEDs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::06933d2b4f1521cfb0b67cbf8ea9ff02 https://doi.org/10.1166/jnn.2011.4351 Zobrazit plný text záznamu