0.1-μm InAlP/InAlAs/InGaAs/InP HEMTs with improved breakdown voltages

Autor:	T. Kobayashi, Haruki Yokoyama, Y. Yamane, Y. Ishii, T. Makimura
Rok vydání:	2003
Předmět:	chemistry.chemical_compound Materials science chemistry Etching (microfabrication) business.industry Schottky barrier Etching selectivity Optoelectronics Breakdown voltage High-electron-mobility transistor business Voltage Gallium arsenide
Zdroj:	Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
DOI:	10.1109/iciprm.1999.773697
Popis:	InAlP/InAlAs/InGaAs/InP HEMTs that offer improved breakdown voltages and reduced gate leak currents are investigated. The InAlP-layer has a larger etching selectivity compared to InAlAs and InGaAs, which is very effective in Vth control. Moreover, it has a larger Eg and Schottky barrier values than InAlAs and InP. These characteristics are suitable for the HEMT's etch stop layer. A fabricated 0.1-/spl mu/m HEMT exhibits 8.1 V breakdown voltage and 1-nA/10-/spl mu/m gate leak current without any performance tradeoff. These results are enough to expand the application area of InP-based HEMTs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::06878e033668eb87a3ce7d43ed806ded https://doi.org/10.1109/iciprm.1999.773697 Zobrazit plný text záznamu