Physical and electrical characterisation of oxynitride films produced by plasma oxidation of deposited silicon nitride layers
| Autor: | W. M. Arnoldbik, Stephen Taylor, G. P. Kennedy, F. H. P. M. Habraken, William Eccleston |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Inorganic chemistry Plasma Chemical vapor deposition Nitride Condensed Matter Physics Thermal conduction Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry Chemical engineering Oxygen plasma Thermal Electrical and Electronic Engineering Electrical integrity |
| Zdroj: | Microelectronic Engineering. 28:141-144 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00033-5 |
| Popis: | LPCVD silicon nitride films have been oxidised in an oxygen plasma using low thermal budget plasma anodisation to produce oxynitride films. The electrical integrity of these films was generally shown to improve following oxidation and a model of the conduction processes in the oxynitride has been suggested. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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