Autor: |
Sang-Soo Noh, Jeong-Hwan Seo, Eung-Ahn Lee, Kwang Ho Kim |
Rok vydání: |
2005 |
Předmět: |
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Zdroj: |
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 18:253-258 |
ISSN: |
1226-7945 |
DOI: |
10.4313/jkem.2005.18.3.253 |
Popis: |
This paper presents characteristics of CrOx thin-film, which were deposited on O wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 and annealing condition(350 , 1 hr) in oxide partial pressure(3.510 torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p |
Databáze: |
OpenAIRE |
Externí odkaz: |
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