| Autor: |
M. Antcliffe, Shihchang Wu, A. Conway, Paul Hashimoto, Jeong-Sun Moon, D. Wong, Miroslav Micovic, M. Hu, Ivan Milosavljevic |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters. 26:348-350 |
| ISSN: |
0741-3106 |
| Popis: |
We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30 GHz. The AlGaN-GaN HEMTs exhibit a CW power density of 5.7 W/mm with a power-added efficiency (PAE) of 45% and drain-efficiency of 58% at V/sub ds/=20 V. At V/sub ds/=28 V, the output power density is measured as high as 6.9 W/mm with both PAE and output power increasing with input power level. Compared to conventional T-gated AlGaN-GaN HEMTs, the output power density and PAE of gate-recessed AlGaN-GaN HFETs are improved greatly, along with the excellent pulsed IVs. We attribute the improvement to both a field-plating effect and a vertical separation of the gate plane from surface states. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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