| Autor: |
Byoung-Chul Jun, Sung-Woon Moon, Sam-Dong Kim, Jung-Hun Oh |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
Current Applied Physics. 10:395-400 |
| ISSN: |
1567-1739 |
| Popis: |
This paper presents a 94 GHz monolithic down-converter with low conversion loss and high local oscillator (LO)-to-RF isolation using the 0.1 μm T-gate metamorphic high electron-mobility transistor (MHEMT) technology. The down-converter consists of a one-stage amplifier and a single-balanced mixer based on the high-directivity tandem coupler structure using the air-bridge crossovers, thereby amplifying the RF signals and maximizing the LO-to-RF isolation by using an inherent S 12 isolation characteristic of the amplifier and good phase balance of the tandem coupler. The fabricated one-stage amplifier using a 30 μm × 2 MHEMT shows a small signal gain of 7 dB at 94 GHz. The single-balanced mixer comprising two 20 μm × 2 MHEMT Schottky diodes and the tandem coupler with an additional λ /4-length line exhibits the conversion loss less than 7.8 dB and the LO-to-RF isolation higher than 30 dB in a RF frequency range of 91–96 GHz. Two circuits designed both for a 50 Ω impedance system are integrated into the down-converter of a 2.6 × 2.5 mm 2 chip size, and it shows a low conversion loss of ∼1 dB at 94 GHz and excellent LO-to-RF isolation above 40 dB in a frequency range of 90–100 GHz. This is the best isolation among the W-band monolithic down-converters reported to date. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect