Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Autor:	Shane R. Stein, Dolar Khachariya, Seiji Mita, M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Kacper Sierakowski, Grzegorz Kamler, Michał Boćkowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Rok vydání:	2023
Předmět:	General Engineering General Physics and Astronomy
Zdroj:	Applied Physics Express. 16:031006
ISSN:	1882-0786 1882-0778
Popis:	We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ∼109, a near-unity ideality factor of 1.03, and a barrier height of ∼0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::064f7c305b7164663b272aafaee60396 https://doi.org/10.35848/1882-0786/acc443 Zobrazit plný text záznamu