Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
Autor: | I.P. Lisovskyy |
---|---|
Rok vydání: | 2011 |
Předmět: | |
Zdroj: | Semiconductor Physics Quantum Electronics and Optoelectronics. 14:127-129 |
ISSN: | 1605-6582 1560-8034 |
Popis: | The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed. |
Databáze: | OpenAIRE |
Externí odkaz: |