Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

Autor: I.P. Lisovskyy
Rok vydání: 2011
Předmět:
Zdroj: Semiconductor Physics Quantum Electronics and Optoelectronics. 14:127-129
ISSN: 1605-6582
1560-8034
Popis: The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.
Databáze: OpenAIRE