High performance InAlAs/InGaAs/InP HEMT/MSM-based OEIC photoreceivers

Autor: L. Adesida, W. Wohlmuth, Patrick Fay, C. Caneau
Rok vydání: 2002
Předmět:
Zdroj: Proceedings of International Electron Devices Meeting.
DOI: 10.1109/iedm.1995.499288
Popis: A high-speed, monolithically integrated photoreceiver suitable for 1.55 /spl mu/m wavelength optical communication systems is described. The tunable photoreceiver, implemented using a metal-semiconductor-metal (MSM) photodetector and InAlAs/InGaAs/InP high electron mobility transistor (HEMT)-based transimpedance amplifier, exhibits -3 dB bandwidths of up to 17 GHz. Noise measurements revealed an input-referred noise current spectral density of 8 pA/Hz/sup 1/2/ when tuned for 10 Gb/s operation, and 12 pA/Hz/sup 1/2/ when tuned for 20 Gb/s operation. This results in a projected sensitivity of -16.5 dBm and -12.3 dBm at 10 and 20 Gb/s, respectively, for a bit error rate of 1/spl times/10/sup -9/.
Databáze: OpenAIRE