Resistance Changes in Silicon by MeV Proton Implantation

Autor:	A. Mogro‐Campero, M. F. Chang, J. L. Benjamin
Rok vydání:	1988
Předmět:	Silicon chemistry Renewable Energy Sustainability and the Environment Proton implantation Materials Chemistry Electrochemistry Physical chemistry chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nuclear chemistry
Zdroj:	Journal of The Electrochemical Society. 135:172-176
ISSN:	1945-7111 0013-4651
DOI:	10.1149/1.2095546
Popis:	On implante des protons dans la region epitaxiale dopee au phosphore d'une grille de transistor isolee. On etudie les changements de resistance en fonction des differentes doses d'implantation
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::062c1a19b230ddb7f912743b0b7d0135 https://doi.org/10.1149/1.2095546 Zobrazit plný text záznamu