Analyzing single bit failure in SRAM with no visual defects

Autor:	Stephen Heinrich-Barna, Aswin N. Mehta
Rok vydání:	2014
Předmět:	Bit cell Bit (horse) Basis (linear algebra) law Computer science Transistor Electronic engineering Hardware_PERFORMANCEANDRELIABILITY Static random-access memory Visual defects law.invention
Zdroj:	2014 IEEE 6th International Memory Workshop (IMW).
DOI:	10.1109/imw.2014.6849393
Popis:	We present a simulation methodology to analyze single bit fails in SRAMs with no visual defect to account for the failure. Our approach generates the MOS IV curves for all six transistors of the failing bit cell and uses this data to simulate read, write and read-disturb failures. A good agreement with the tester data then establishes the basis for the failure even in the absence of any visual defect(s).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::061cbf601b967033f1d4c2e323dfeee3 https://doi.org/10.1109/imw.2014.6849393 Zobrazit plný text záznamu