The effect of Ar+ion implantation on the electrical characteristics of Cr/P‐Si Schottky diodes

Autor:	B. de Witt, G.L.P. Berning, J. B. Malherbe
Rok vydání:	1992
Předmět:	Arrhenius equation symbols.namesake Ion implantation Equivalent series resistance Saturation current Chemistry Schottky barrier symbols Analytical chemistry General Physics and Astronomy Schottky diode Atmospheric temperature range Reactive-ion etching
Zdroj:	Journal of Applied Physics. 71:2757-2759
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.351049
Popis:	The effect of 150‐keV Ar+ ion implantation of Cr/p‐Si(100) Schottky contacts was studied by measuring the current voltage characteristics over the temperature range 293–373 K before and after different doses of ion bombardment. The characteristics obtained were used in a least‐squares fitting procedure to determine the ideality constant n, the saturation current IS, the series resistance R, and the Schottky barrier height Φb. Ar+ ion bombardment resulted in higher values for n and R but a lower value for IS. The value of Φb increased by 10%. The apparent reason for the increase in Φb for p‐type contacts as well as the decrease for n‐type contacts is discussed in reference to the identical behavior earlier reported for low‐energy inert gas ion beam etching and reactive ion etching of Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::061a907b79917ff423d8fc21f0627ee8 https://doi.org/10.1063/1.351049 Zobrazit plný text záznamu