Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region
| Autor: | Zhiyou Guo, Hao Sun, Zhang Zhuding, Xuna Li, Xuancong Fan, Cheng Zhang, Huiqing Sun |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Band gap business.industry Wide-bandgap semiconductor 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Optoelectronics Quantum efficiency Spontaneous emission Electrical and Electronic Engineering 0210 nano-technology business Quantum well Electron-beam lithography Diode Light-emitting diode |
| Zdroj: | Journal of Display Technology. 12:573-576 |
| ISSN: | 1558-9323 1551-319X |
| Popis: | Optical performances of blue InGaN light-emitting diodes (LEDs) with an undoped AlGaN electron-blocking layer (U-AlGaN EBL) embedded in the active region are investigated numerically. As a benefit of this special structural design, the electrons would spill over the EBL and recombine with the holes in the wells close to the p-side. Moreover, holes in the wells that are close to the n-side increase to a higher concentration due to the presence of a new shallow potential well in the valence band. The simulation results indicate that the LEDs with U-AlGaN EBL has higher internal quantum efficiency as well as light output power compared with the conventional single p-type AlGaN EBL structure. These improvements are primarily contributed to the enhancement on electrons confinement and holes injection. |
| Databáze: | OpenAIRE |
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