Solar cells based on CCSVT-grown CuGaSe2—absorber and device properties
| Autor: | N.R. Grigorieva, Marin Rusu, Christian A. Kaufmann, Th. Schedel-Niedrig, S. Doka, M.Ch. Lux-Steiner |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Soda-lime glass
business.industry Band gap Chemistry Photovoltaic system Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Absorption edge law Solar cell Materials Chemistry Transmittance Optoelectronics Thin film business Deposition (law) |
| Zdroj: | Thin Solid Films. :341-346 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.11.088 |
| Popis: | For solar cells based on CuGaSe 2 (CGSe) polycrystalline thin films, a novel efficient chemical close-spaced vapor transport (CCSVT) technique is used to deposit the CGSe absorber. Clean and Mo-coated soda lime glass (SLG) substrates are used for the CGSe deposition. The CGSe thickness ranges from 1.6 to 1.9 μm and the corresponding [Ga]/[Cu] ratio of the thin films is adjusted within the range of 0.9–1.3. The high bulk homogeneity of the as-grown CGSe films is shown. Transmittance and reflectance measurements were performed to monitor the changes in the CGSe band gap as a function of composition. The optical spectra reveal a shift of the absorption edge towards longer wavelengths with increasing Ga content, as well as a broadening of the distinct structure corresponding to three band-to-band transitions characteristic for CGSe. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe 2 solar cell photovoltaic parameters as well of the current transport. The transport mechanism is analysed on an our best solar cell device with an active area efficiency of 8.7%. For the first time, a thermally activated Shockley–Read–Hall recombination mechanism is observed for the CGSe-based solar cells in a large temperature region. |
| Databáze: | OpenAIRE |
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