PbMgSrTe and PbSrTeSe Films Prepared by Hot-Wall Epitaxy

Autor:	Nobuhiro Sakurai, Hiroshi Fujiyasu, Keiichi Matsushita, Akihiro Ishida
Rok vydání:	1994
Předmět:	Chemistry business.industry Band gap Inorganic chemistry General Engineering Analytical chemistry General Physics and Astronomy Epitaxy Lattice constant Charge-carrier density Semiconductor Electrical resistivity and conductivity Hall effect Electronic band structure business
Zdroj:	Japanese Journal of Applied Physics. 33:6486
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.33.6486
Popis:	PbSrSe and PbSrTe films were prepared by hot-wall epitaxy, and their characteristics such as energy band gaps, lattice constants and electrical properties were measured and compared with those of PbSrS. The band gaps of Pb1-xSrxSe and Pb1-xSrxTe films increase as dEg/ dx=2.5 eV and dEg/ dx=3.6 eV, respectively. Deviation of the lattice constant of PbSrSe from that of PbSe was very small with Sr composition less than 10%, and PbSrSe/PbSe system is lattice-matched better than PbSrS/PbS system. On the other hand, the lattice constant of PbSrTe increased rapidly with Sr composition. New quaternary semiconductors such as Pb1-x-yMgxSryTe and Pb1-xSrxTe1-ySeyfilms lattice-matched to PbTe were also prepared. Growth and characteristics of these films are also presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0618733c80688f67ed915705452f2f01 https://doi.org/10.1143/jjap.33.6486 Zobrazit plný text záznamu