Bottom–Up-Fabricated Oxide–Metal–Semiconductor Spin-Valve Transistor
| Autor: | O. Olowolafe, Lai Zhao, Biqin Huang, Ian Appelbaum |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Oxide Spin valve Injector Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Semiconductor chemistry Ferromagnetism law Electronic engineering Optoelectronics Electrical and Electronic Engineering business Common emitter |
| Zdroj: | IEEE Electron Device Letters. 29:892-894 |
| ISSN: | 0741-3106 |
| Popis: | Spin-valve transistors (SVTs) employing hot-electron transport through ferromagnetic multilayers have large magnetocurrent (MC), making them a promising magnetic field sensor. However, the assembly technique required for fabricating the necessary semiconductor-metal-semiconductor structure limits their use. We have circumvented this problem with an alternative fabrication technique and show a greater than 300% MC change in SVT devices employing a sputter-deposited zinc oxide (ZnO) semiconductor emitter as hot-electron injector. The compatibility of this process to standard fabrication techniques makes it possible to integrate the SVT into present-day industrial technology. |
| Databáze: | OpenAIRE |
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