Kinetics of Te precipitation in mercury cadmium telluride
| Autor: | M. Neubert, F. M. Kiessling, B. Barz, Karin Jacobs |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Supersaturation
Precipitation (chemistry) Diffusion Kinetics Analytical chemistry Mineralogy Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal chemistry.chemical_compound chemistry Vacancy defect Materials Chemistry Mercury cadmium telluride Electrical and Electronic Engineering Stoichiometry |
| Zdroj: | Semiconductor Science and Technology. 8:2151-2160 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/8/12/020 |
| Popis: | Hg0.8Cd0.2Te crystals grown by the travelling heater method show characteristic carrier concentration profiles along their longitudinal axis. Positron annihilation measurements confirm that the carrier concentration profiles can be identified with Hg vacancy concentration profiles. While the general shape of these profiles is almost identical, the specific form depends on the thermal growth history of the individual crystal. A model is presented explaining the evolution of these concentration profiles by Te precipitation during growth and cooling. Quantitative agreement between experimental and calculated profiles is obtained introducing a Hg vacancy diffusion coefficient that is proportional to the local Te supersaturation. An experimental technique has been developed enabling the determination of such diffusion coefficients. The model is supposed to be generally applicable to the description of the precipitation kinetics of the excess component in crystals with considerable deviation from stoichiometry. |
| Databáze: | OpenAIRE |
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