Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

Autor:	Raphael Clerc, Jerzy Łusakowski, Gerard Ghibaudo, K. Romanjek, Thomas Skotnicki, Yahya Moubarak Meziani, Frederic Boeuf, M. Ferrier, Frederic Teppe, Nina Dyakonova, Wojciech Knap
Rok vydání:	2004
Předmět:	Electron density Electron mobility Materials science Condensed matter physics Silicon chemistry Magnetoresistance Scattering MOSFET Induced high electron mobility transistor General Physics and Astronomy chemistry.chemical_element Nanometre
Zdroj:	Journal of Applied Physics. 96:5761-5765
ISSN:	1089-7550 0021-8979
Popis:	We report on the high-field (up to 10T) magnetoresistance measurements performed on the short (down to 75-nm gate length) n-type Si metal-oxide-semiconductor field-effect transistors. The electron magnetoresistance mobility of these nanometer devices was determined for a wide range of the electron concentration (107–1013cm−2, i.e., from a weak to a strong inversion) and gate length (10μm–75nm). In the case of long samples, the magnetoresistance mobility was compared to the effective mobility obtained by the standard parameter extraction and the split C–V techniques. The results are discussed in terms of the scattering power-law two-dimensional transport analysis. The data clearly indicate a significant decrease of the mobility with the gate length reduction below 100nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::060d154ea7836662a768f8a88ded9568 https://doi.org/10.1063/1.1806991 Zobrazit plný text záznamu