Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOI) Phase Modulator

Autor:	H. Hazura, A. R. Hanim, B. Mardiana, Sahbudin Shaari, P. S. Menon, Abdul Manaf Hashim, Vijay K. Arora
Rok vydání:	2011
Předmět:	Silicon photonics Materials science genetic structures Silicon business.industry Physics::Optics Silicon on insulator chemistry.chemical_element Electro-optic modulator Optics Optical modulator chemistry Optoelectronics sense organs Free carrier absorption business Refractive index Phase modulation
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
Popis:	Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for on-chip optical networks. The device converts data from electrical domain to the optical domain. Most studies for high speed modulation method in Si or Si based device are based on free carrier concentration variations (injection or depletion of free carriers) which are responsible for local refractive index variations and then phase modulation of a guided wave traveling through the active region. A change in the refractive index/absorption can be achieved by injection or depletion of both electron and holes into the intrinsic region of a silicon p-i-n diode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::05f5eb7500bd6b6b9047f642f400f4e6 https://doi.org/10.1063/1.3586993 Zobrazit plný text záznamu