The effect of Ti and O ion implantation on the resistive switching in Pt/TiO2−x /Pt devices

Autor:	Vladimir Kochergin, Madrakhim Zaynetdinov, Ligang Gao, Brian D. Hoskins, Dmitri B. Strukov
Rok vydání:	2015
Předmět:	Resistive touchscreen Materials science Ion implantation chemistry Resistive switching Analytical chemistry chemistry.chemical_element General Materials Science General Chemistry Oxygen Voltage drop Voltage Leakage (electronics)
Zdroj:	Applied Physics A. 120:1599-1603
ISSN:	1432-0630 0947-8396
Popis:	The effects of Ti and O implantation on TiO2−x resistive switches are systemically investigated. The forming voltage drops monotonically with Ti implantation dose and forming vanishes completely at 1016 ions/cm2, whereas oxygen implantation causes a decrease and then increase in forming voltage. The ON/OFF current ratio becomes worse with high Ti implantation due to increased leakage currents through the TiO2 film. Furthermore, the forming voltage minimum induced by oxygen implantation can be shifted by thermal annealing, suggesting a careful balance between oxidation, reduction, and ion implantation damage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::05f04d6d9def53a449f5676efeda8fdf https://doi.org/10.1007/s00339-015-9368-9 Zobrazit plný text záznamu Plný text ve formátu PDF