Czochralski growth of 2 in. Ce-doped (La,Gd)2Si2O7 for scintillator application
| Autor: | Valery Chani, Shunsuke Kurosawa, Yasuhiro Shoji, Takahiko Horiai, Yuji Ohashi, Yuui Yokota, Akira Yoshikawa, Kei Kamada, Rikito Murakami, Vladimir V. Kochurikhin |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Doping Analytical chemistry Micro-pulling-down 02 engineering and technology Scintillator 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Thermal expansion Inorganic Chemistry Crystal Crystallography Hot zone Short lifetime 0103 physical sciences Activator (phosphor) Materials Chemistry 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 452:57-64 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2016.06.016 |
| Popis: | Growth of 2-in. diameter Ce-doped (La , Gd) 2 Si 2 O 7 (La-GPS) scintillating crystals by Czochralski method using Ir crucible is reported. The composition of the host material was approximately equal to La 0.5 Gd 1.5 Si 2 O 7 and the concentration of the Ce 3+ -activator was either 0.5 or 1.5 at.% with respect to the total content of the rare-earths forming the host crystal matrix. Effects of the hot zone construction including inductive coil position, presence/absence of the after-heater, rotation rate and other growth parameters on the crystal quality are discussed in some details. The crystals produced in optimized conditions were colorless, transparent, uniform in their shape, crack- and inclusions-free, and demonstrated smooth glass-like surface. The length of the crystals’ cylindrically-shaped body parts exceed 100 mm. The growth results were well reproducible. The main disadvantage of the growth process is associated with short lifetime of the Ir crucible and its deformation caused by thermal expansion of the pre-solidified melt at each heating stage. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect