Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques

Autor: Katsuya Ishikawa, Morio Inoue, Kohji Mizoguchi, Shinichi Nakashima, Masakatsu Yoshida
Rok vydání: 1992
Předmět:
Zdroj: Japanese Journal of Applied Physics. 31:L1422
ISSN: 1347-4065
0021-4922
Popis: Damage in silicon crystals implanted with various doses at different acceleration energies has been characterized by Raman scattering and photothermal wave techniques. Depth profiles of the damage in the implanted silicon crystals have been estimated from the Raman scattering measurements. The Raman scattering and photothermal wave measurements were compared. The results show that the quantities measured by the two techniques are strongly correlated at low dose levels and that they can be used to characterize damage induced by ion implantation.
Databáze: OpenAIRE