Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
| Autor: | Katsuya Ishikawa, Morio Inoue, Kohji Mizoguchi, Shinichi Nakashima, Masakatsu Yoshida |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
inorganic chemicals
Silicon Quantitative Biology::Tissues and Organs Physics::Medical Physics technology industry and agriculture General Engineering Analytical chemistry Physics::Optics General Physics and Astronomy chemistry.chemical_element Photothermal therapy Molecular physics Characterization (materials science) BORO symbols.namesake Ion implantation chemistry symbols Wafer Boron Raman scattering |
| Zdroj: | Japanese Journal of Applied Physics. 31:L1422 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | Damage in silicon crystals implanted with various doses at different acceleration energies has been characterized by Raman scattering and photothermal wave techniques. Depth profiles of the damage in the implanted silicon crystals have been estimated from the Raman scattering measurements. The Raman scattering and photothermal wave measurements were compared. The results show that the quantities measured by the two techniques are strongly correlated at low dose levels and that they can be used to characterize damage induced by ion implantation. |
| Databáze: | OpenAIRE |
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