Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
| Autor: | V. V. Ratnikov, D. Yu. Kazantsev, I. V. Osinnykh, K. S. Zhuravlev, M. P. Sheglov, B. Ya. Ber, Timur V. Malin |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Doping Analytical chemistry Crystal growth 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Crystallographic defect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Residual stress 0103 physical sciences X-ray crystallography 0210 nano-technology Molecular beam epitaxy |
| Zdroj: | Semiconductors. 52:221-225 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618020136 |
| Popis: | The deformation mode and defect structure of Al x Ga1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 1019 cm–3. It is found that the lateral residual stresses are compressive at x 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 1010 and 8.2 × 1010 cm–2, respectively. |
| Databáze: | OpenAIRE |
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