Annealing-temperature-dependent evolution of hydrogen-related donor and its strong correlation with X-photoluminescence center in proton-irradiated silicon

Autor: Akira Kiyoi, Naoyuki Kawabata, Katsumi Nakamura, Yasufumi Fujiwara
Rok vydání: 2022
Předmět:
Zdroj: Journal of Applied Physics. 131:125702
ISSN: 1089-7550
0021-8979
DOI: 10.1063/5.0083249
Popis: We have investigated the formation and decay of hydrogen-related donors (HDs) and irradiation-induced intrinsic defects. N-type m:Cz and FZ silicon wafers, which were irradiated with 2 MeV protons and subsequently annealed at 100–600 °C, were analyzed using spreading resistance profiling and photoluminescence (PL). HDs formed at 260 °C and then disappeared in two stages at 400–440 and 500–540 °C. This decay behavior indicates the existence of two types of HDs with different thermal stabilities. PL measurements showed interstitial silicon clusters ( W and X center), a carbon–oxygen complex ( C center), and exciton lines bound to unknown shallow centers. The origin of the HDs was investigated based on the correlation of the formation and decay temperatures between HDs and irradiation-induced defects. The predominant defects at the early stage of annealing, such as the C and W centers, are ruled out as candidates for the core defects of HDs because annealing above 260 °C is indispensable for the HD formation. In contrast, the X center was found to be thermally generated above 200 °C and disappeared at 580 °C. The similarity of the formation and decay temperatures between the X and HD centers suggests that HDs are associated with the formation of the interstitial silicon-related defects attached to hydrogen. Our results suggest that controlling the formation of interstitial silicon-related defects is important for realizing desirable doping profiles with high accuracy and reproducibility for power devices. Annealing above 400 °C exclusively provides thermally more stable HDs, leading to the realization of more rugged power devices.
Databáze: OpenAIRE
Externí odkaz: