| Autor: |
L. Yu, Zi Li Xie, Xiang Qian Xiu, Jing Ping Dai, Li Qun Hu, Ping Han, Hong Zhao, Chen Peng, Cai Chuan Wu, Xiao Long He, Bin Liu, Shu Fan, Xue Fei Li, Dunjun Chen, Youdou Zheng, Xue Mei Hua, Rong Zhang |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Advanced Materials Research. :391-395 |
| ISSN: |
1662-8985 |
| Popis: |
The AlN nucleation layer (NL) has been deposited on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). The result indicates that the growth mode of the AlN NL is in the form of 2-dimensional plane and 3-dimensional island. The proportion of 3-dimensional region increases gradually and the 2-dimensional region reduces correspondingly with the increase of growth time. The decrease of the coverage ratio of AlN grains in the 2-dimensional growth region is due to the effect of etching. AlN film with the single crystal orientation has been deposited on the optimized AlN NL. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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