High accuracy large-signal SPICE model for silicon carbide MOSFET
| Autor: | Kuo-Ting Chu, Cheng-Tyng Yen, Lurng-Shehng Lee, Fu-Jen Hsu, Chien-Chung Hung, Chwan-Ying Lee, Ya-Fang Li |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
020208 electrical & electronic engineering Spice Semiconductor device modeling JFET 02 engineering and technology 01 natural sciences chemistry.chemical_compound chemistry Logic gate 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Silicon carbide BSIM Algorithm Diode Mathematics |
| Zdroj: | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | This paper provides a method to match characteristics of SiC MOSFET by a simple SPICE model. Besides, this method not only reaches highly approximate results in an accuracy of characteristics compared to commercial SiC SPICE model but also reduces lots of quantities of parameters from modified BSIM model. This method expresses the 1st quadrant I D -V DS and I D -V GS curve well by some additional modified equations. Also, the model development of the 3rd quadrant characteristics, which combines a diode with a JFET model, obtains a good fitting result. Finally, compared to conventional models, the R-square value and normalized RMSD value are significantly improved. |
| Databáze: | OpenAIRE |
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