Hot carrier degradation in LDMOS power transistors

Autor:	J.H. Shao, Chih-Chang Cheng, J.W. Wu, C.C. Lee, Tahui Wang
Rok vydání:	2004
Předmět:	LDMOS Materials science business.industry Transistor Analytical chemistry law.invention Impact ionization law Optoelectronics Degradation (geology) Power semiconductor device Power MOSFET business Drain current Hot-carrier injection
Zdroj:	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
Popis:	The hot carrier performance of N-LDMOS and P-LDMOS transistors is evaluated. For N-LDMOS transistors, the drain current degradation is shown to be due to hot electron injection in the drift region field oxide (bird's beak edge). On the other hand, the hot carrier-damaged region of P-LDMOS transistors is within the channel region, and hot electron is also the source of degradation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::05a1f959cf84cd56da95e27a0b89249b https://doi.org/10.1109/ipfa.2004.1345626 Zobrazit plný text záznamu