Electron microscopy characterization of higher manganese silicide film structure on silicon
| Autor: | E. V. Rakova, T. S. Kamilov, N. A. Arkharova, Vera V. Klechkovskaya, Andrey S. Orekhov, Anton S. Orekhov |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon General Engineering chemistry.chemical_element 02 engineering and technology Manganese Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Orientation (vector space) Crystallography chemistry Electron diffraction law Transmission electron microscopy 0103 physical sciences General Materials Science Electron microscope 0210 nano-technology Deposition (law) |
| Zdroj: | Nanotechnologies in Russia. 11:610-616 |
| ISSN: | 1995-0799 1995-0780 |
| Popis: | The structure and composition of higher manganese silicide (HMS) films on Si(111) substrate are studied by high-resolution transmission electron microscopy, electron diffraction, and energy-dispersive X-ray spectroscopy. The formation of Mn4Si7 HMS film by the deposition of the gas-phase manganese onto silicon at 1040°C is observed. The film/substrate interface is semicoherent and does not contain any intermediate layer. The interface structure is refined by computer simulation. The orientation relationship \(\left( {\overline 1 \overline 2 4} \right)\left[ {443} \right]M{n_4}S{i_7}||\left( {1\overline 1 \overline 1 } \right)\left[ {001} \right]Si\) between the film and substrate is determined. |
| Databáze: | OpenAIRE |
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