Improvement of yield ratio of ohmic contact to GaAs/AlGaAs heterostructure by application of SiO 2 protective layer

Autor:	K. Matsuhiro, S. Kiryu, Taro Itatani, Nobu-Hisa Kaneko, Takehiko Oe, Sucheta Gorwadkar
Rok vydání:	2011
Předmět:	Materials science business.industry Contact resistance Analytical chemistry Heterojunction Substrate (electronics) Quantum Hall effect Photoresist Condensed Matter Physics Corrosion Optoelectronics business Layer (electronics) Ohmic contact
Zdroj:	physica status solidi c. 9:270-273
ISSN:	1610-1642 1862-6351
Popis:	All the contact pads of a quantized Hall resistance (QHR) device should have a low contact resistance (∼1 Ω) for the application of DC resistance standard devices at cryogenic temperatures. Corrosion of a GaAs/AlGaAs substrate occurs along the edge of the photoresist before the deposition of Ni/AuGe, and we assume that this corrosion degrades the contact resistance. A SiO2 protective layer is effective in preventing the corrosion of and protecting the surface of GaAs/AlGaAs substrate. With the use of this SiO2 protective layer, the yield ratio of the contact resistance to the twodimensional electron gas (2DEG) layer at low temperature (∼0.5 K) and high magnetic field (∼9 T) improves to nearly 100%. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0563e963c4925da4f6a35a2617d7d338 https://doi.org/10.1002/pssc.201100293 Zobrazit plný text záznamu Plný text