Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup
| Autor: | Imrich Gablech, Jan Pekárek, Ondřej Caha, Vojtěch Svatoš, Pavel Neužil, Jaroslav Klempa, Michael Schneider, Tomáš Šikola, Adam Dubroka |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Microelectromechanical systems Materials science Piezoelectric coefficient business.industry Metals and Alloys 02 engineering and technology Surfaces and Interfaces Substrate (electronics) Nitride 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Ellipsometry Sputtering 0103 physical sciences Materials Chemistry Optoelectronics Thin film 0210 nano-technology business |
| Zdroj: | Thin Solid Films. 670:105-112 |
| ISSN: | 0040-6090 |
| Popis: | We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N−1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits. |
| Databáze: | OpenAIRE |
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