Plasma process optimization for N-type doping applications
| Autor: | Kerry Lacey, Jeff Y. Hu, Shu Qin, Harold Persing, Deven Raj, Allen McTeer, Siamak Salimian |
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| Rok vydání: | 2012 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Inorganic chemistry Transistor Doping Hardware_PERFORMANCEANDRELIABILITY law.invention Ion implantation law Etching (microfabrication) Sputtering Hardware_INTEGRATEDCIRCUITS Optoelectronics Process optimization Wafer business Dram Hardware_LOGICDESIGN |
| Zdroj: | AIP Conference Proceedings. |
| ISSN: | 0094-243X |
| DOI: | 10.1063/1.4766491 |
| Popis: | Plasma doping (PLAD) has been adopted across the implant technology space and into high volume production for both conventional DRAM and NAND doping applications. PLAD has established itself as an alternative to traditional ion implantation by beamline implantation. The push for high doping concentration, shallow doping depth, and conformal doping capability expand the need for a PLAD solution to meet such requirements. The unique doping profile and doping characteristics at high dose rates allow for PLAD to deliver a high throughput, differentiated solution to meet the demand of evolving transistor technology. In the PLAD process, ions are accelerated to the wafer as with a negative wafer bias applied to the wafer. Competing mechanisms, such as deposition, sputtering, and etching inherent in plasma doping require unique control and process optimization. In this work, we look at the distinctive process tool control and characterization features which enable an optimized doping process using n-type (PH3 or... |
| Databáze: | OpenAIRE |
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