Modeling mask fabrication and pattern transfer distortions for EPL stencil masks
| Autor: | C. Magg, Edward G. Lovell, Michael J. Lercel, Phillip L. Reu, Roxann L. Engelstad |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Fabrication business.industry Nanotechnology Condensed Matter Physics Stencil Atomic and Molecular Physics and Optics Finite element method Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics Stencil lithography Wafer Sensitivity (control systems) Electrical and Electronic Engineering business Lithography Electron-beam lithography |
| Zdroj: | Microelectronic Engineering. :467-473 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(01)00470-1 |
| Popis: | Electron-beam stencil lithography, a next-generation lithography technology planned for the sub-100 nm nodes, requires the manufacture of a low distortion mask. Fabrication and pattern transfer processes were modeled for the 4-inch format mask using finite element simulations. A comparison of pattern transfer distortions between the wafer flow and the membrane flow process was conducted. Sensitivity to the stress level of the membrane layers was also investigated. In-plane and out-of-plane distortions were reported for each step in the fabrication process, utilizing the IBM Falcon pattern format. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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