| Autor: |
P.F. Baude, K. Smekalin, K. K. Law, T. J. Miller, Michael A. Haase, G. M. Haugen |
| Rok vydání: |
1996 |
| Předmět: |
|
| Zdroj: |
Electronics Letters. 32:345 |
| ISSN: |
0013-5194 |
| DOI: |
10.1049/el:19960249 |
| Popis: |
Room temperature continuous wave operation of CdZnSSe/ZnSSe quantum well laser diodes based on wide-gap II-VI semiconductors with lifetimes >3 h has been demonstrated. The density of stacking faults and threading dislocations present inside the laser diodes is /spl sim/5/spl times/10/sup 4//cm/sup 2/. Laser emission was observed at a wavelength of /spl sim/529 nm with a threshold current density of /spl sim/460 A/cm/sup 2/ and a threshold voltage of /spl sim/5 V in index-guided CdZnSSe/ZnSSe/MgZnSSe separate-confinement heterostructure laser diodes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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