Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor
| Autor: | Chuang Li, Fang Wang, Jiaqiang Shen, Xin Shan, Kailiang Zhang, Xin Lin, Baozeng Zhou, Qing Wan |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Schottky barrier Bioengineering 02 engineering and technology Memristor Plasticity 010402 general chemistry Inhibitory postsynaptic potential 01 natural sciences law.invention Synapse law General Materials Science Electrical and Electronic Engineering business.industry Mechanical Engineering Conductance Long-term potentiation General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Mechanics of Materials Excitatory postsynaptic potential Optoelectronics 0210 nano-technology business |
| Zdroj: | Nanotechnology. 31:265202 |
| ISSN: | 1361-6528 0957-4484 |
| Popis: | Both synaptic emulators and brain-like calculation demand an energy-efficient and bio-realistic device where two-dimensional materials have been proven as a promising competitor. Lateral memristors based on transfer-free single-crystal MoS2 with single layer grown by chemical vapor deposition (CVD) were fabricated. Here the MoS2 memristor successfully emulates typical biological synaptic behaviors including excitatory/inhibitory post-synaptic current (EPSC/IPSC), spike timing-dependent plasticity (STDP), spike rate-dependent plasticity (SRDP) and long-term plasticity (LTP). Moreover, an interesting multi-state LTP and a low consumption of 1.8 pJ after LTP process are achieved which is attributed to the high resistance of transfer-free single-crystal monolayer MoS2, representing a low value among previous MoS2 devices. The migration of Sulfur vacancies lead the conductance modulation by changing the Schottky barrier instead of forming a filament. Our work demonstrates that MoS2 memristors can more flexibly satisfy the demands of complex artificial synaptic/neuron applications. |
| Databáze: | OpenAIRE |
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