Thermal stability of CoSi2layers implemented in a silicon-on-insulator substrate
| Autor: | Sven Zimmermann, C. Kaufmann, H. Höhnemann, Qing-Tai Zhao, V. Dudek, B. Trui, Siegfried Prof. Dr. Mantl, Maik Wiemer, H. L. Bay |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Wafer bonding Mineralogy Silicon on insulator BiCMOS Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Electrical resistivity and conductivity Transmission electron microscopy Silicide Materials Chemistry Wafer Thermal stability Electrical and Electronic Engineering Composite material |
| Zdroj: | Semiconductor Science and Technology. 21:157-161 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/21/2/010 |
| Popis: | A silicon-on-metal-on-insulator substrate, consisting of a top Si layer, a buried CoSi2 layer and a buried SiO2 layer on a Si (1 0 0) substrate was formed using Co silicidation, wafer bonding and wafer splitting. It is shown that the buried silicide layers in this structure exhibit a much higher thermal stability than surface layers. Resistivity measurements and cross-sectional transmission electron microscopy investigations revealed that buried CoSi2 layers withstand furnace anneals at 1000 °C up to 2 h, while surface CoSi2 layers started to degrade after 10 min anneals at 1000 °C. The proposed substrate is most useful for BiCMOS applications. |
| Databáze: | OpenAIRE |
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