| Popis: |
For the first time in the UK, the deposition of amorphous silicon-germanium layers from SiH 4 and GeH 4 gaseous sources has been carried out using plasma enhanced vapour deposition, at low temperatures and pressures. The partial pressures of the source gases were adjusted to yield a range of Si : Ge alloy concentrations. The films were deposited onto tungsten and silicon substrates for analysis purposes : electron beam techniques including AES, SEM and EDAX were employed to establish the relative concentrations of silicon and germanium; and infra-red spectroscopy was used to investigate the interatomic bonding in the films. The films were smooth, reflective and adherent to the substrate, and exhibited high germanium incorporation at relatively modest GeH 4 partial pressures. |
