New statistical optimization method in fabricating 65nm MOSFET transistors using Monte Carlo and Dual Pearson models

Autor:	Chu-Yu Chen, Jia-Chun Lin, Meng-Hua Tsa
Rok vydání:	2011
Předmět:	Engineering business.industry Monte Carlo method Transistor Exploratory factor analysis law.invention Dual (category theory) law MOSFET Electronic engineering Statistical analysis Mosfet circuits business Algorithm
Zdroj:	2011 International Meeting for Future of Electron Devices.
DOI:	10.1109/imfedk.2011.5944840
Popis:	In this paper, a new statistical analysis method is presented to investigate the effect of nine factors in the 65nm MOSFET structure. The aim of this work is to clarify the electrical properties, correlation of the principal factors, based on exploratory factor analysis (EFA). From the simulation result, optimization parameters are determinative to achieve the objective.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::053c8288505207631337a9d31ee2da09 https://doi.org/10.1109/imfedk.2011.5944840 Zobrazit plný text záznamu