Modeling Titanium Oxide Growth by Chemical Vapor Deposition Using Titanium Tetra Isopropoxide

Autor:	Katsuya Shitanaka, Hiroshi Murakami, Yasunobu Akiyama
Rok vydání:	2008
Předmět:	Materials science biology General Chemical Engineering Inorganic chemistry chemistry.chemical_element General Chemistry Activation energy Chemical vapor deposition biology.organism_classification Titanium oxide Reaction rate constant chemistry Tetra Growth rate Thin film Titanium
Zdroj:	JOURNAL OF CHEMICAL ENGINEERING OF JAPAN. 41:779-784
ISSN:	1881-1299 0021-9592
DOI:	10.1252/jcej.07we118
Popis:	Titanium oxide (TiO2) thin films were grown on Si(100) substrates using the chemical vapor deposition (CVD) of titanium tetra isopropoxide (TTIP; Ti(OCH(CH3)2)4). The distribution of the growth rate in the reactor and the step coverage of films grown in the range 593–1173 K could was using our “simple reaction model.” The TTIP changed into TiO2 directly via a surface reaction. The surface reaction rate constant was determined by comparing the step coverage of grown and simulated films. The activation energy of the surface reaction was 212 kJ/mol (T < 710 K).
Databáze:	OpenAIRE
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