| Autor: |
T.C. Wang, J.T. Yeh, Y.C. Chen, S.H. Chiou, C. Huang, M.J. Kao, W.H. Wang, M.J. Chen, T.H. Yu, L.L. Chein, M.Y. Liu, N.T. Shih, D.S. Chao, M.-J. Tsai, F. Chen, D. Huang, T.C. Hsiao, L.S. Tu, C. Lee, C.W. Chen, R. Yen, W.S. Chen |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 IEEE International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2007.4418935 |
| Popis: |
A cross-spacer phase change memory (PCM) cell with ultra-small lithography-independent contact area for reduced writing current has been successfully demonstrated. By crossing the spacer sidewalls of phase change and heater material, a small contact area of ~1,000 nm2 with 0.23 mA reset current is therefore obtained. The result of a derived 2-bit per cell (Chain) structure is also shown. The cross-spacer cell structure is a potential candidate for PCM with multi-bit per cell in one PC layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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