New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress

Autor:	J. Patterson, S. Willard, D. Hannaman, J. Dunkley, Guann-Pyng Li, G.J. Sonek, P. K. Gopi
Rok vydání:	1993
Předmět:	Physics and Astronomy (miscellaneous) Hydrogen Passivation Chemistry business.industry Bipolar junction transistor Transistor chemistry.chemical_element Semiconductor device law.invention law Stress relaxation Breakdown voltage Optoelectronics business Current density
Zdroj:	Applied Physics Letters. 63:1237-1239
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.109783
Popis:	Avalanche hot carrier induced bipolar device degradation as a function of temperature, current density, and time is reported. The observed drift in emitter‐base breakdown voltage (Vebo) is found to be well correlated to changes in forward base (Ib) and collector (Ic) currents. The model of hydrogen release from the Si‐SiO2 interface and its subsequent passivation of base dopants during hot carrier stress is proposed to account for such a correlation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0519b58d5dd8b08f2a20dc9c827f928b https://doi.org/10.1063/1.109783 Zobrazit plný text záznamu