Multistep deposition of Cu2 Si(S,Se)3 and Cu2 ZnSiSe4 high band gap absorber materials for thin film solar cells

Autor:	Hossam ElAnzeery, Marc Meuris, David Cheyns, Souhaib Oueslati, Rafik Guindi, Jef Poortmans, Khaled Ben Messaoud, Guy Brammertz, Marie Buffiere, Ounsi El Daif
Rok vydání:	2015
Předmět:	Photoluminescence Materials science business.industry Annealing (metallurgy) Band gap Scanning electron microscope Condensed Matter Physics Optics Photovoltaics Optoelectronics General Materials Science Crystallite Thin film business Ternary operation
Zdroj:	physica status solidi (RRL) - Rapid Research Letters. 9:338-343
ISSN:	1862-6254
Popis:	Cu2ZnSi(S,Se)4 and Cu2Si(S,Se)3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu2SiS3, Cu2SiSe3and Cu2ZnSiSe4thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X-ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu2Si(S,Se)3 and Cu2ZnSiSe4phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu2SiSe3 and Cu2SiS3, and quaternary Cu2ZnSiSe4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0518025b992300f9afc1047c334bf1f2 https://doi.org/10.1002/pssr.201510125 Zobrazit plný text záznamu Plný text