Crystallization of silicon films by new metal mediated mechanism
| Autor: | Chiung-Wei Lin, Yeong Shyang Lee, Seng Chi Lee |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Amorphous silicon
Materials science Silicon Nanocrystalline silicon chemistry.chemical_element Mineralogy engineering.material Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid law.invention chemistry.chemical_compound Polycrystalline silicon chemistry Chemical engineering law engineering Electrical and Electronic Engineering Crystallization Metal-induced crystallization Sheet resistance |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 21:270-277 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-009-9904-5 |
| Popis: | In this paper, highly crystallized silicon films can be obtained by using a new metal-mediated mechanism. In this method, the infrared radiation was absorbed by a reusable metal-coated plate and then the photon energy was converted into heat. The transferred heat was provided to crystallize amorphous silicon into polycrystalline silicon. Contrary to the conventional metal induced crystallization method, it was proved that this proposed method was free from the inclusion of metal atom in crystallized films. The average grain size, surface roughness and average sheet resistance of crystallized film are 0.9 μm, 0.51 nm and 90 Ω/□, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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