A 5V-only E2PROM using 1.5µ lithography
| Autor: | D. Oto, S. Nieh, G. Congwer, V. Dham, K. Gudger, J. Olund, Yaw Hu |
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| Rok vydání: | 1983 |
| Předmět: | |
| Zdroj: | 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. |
| DOI: | 10.1109/isscc.1983.1156502 |
| Popis: | A floating-gate E2PROM technology with 1.5μm design rules used to build a 5V-only 2K×8 E2PROM with a cell size of 270μm2and chip area of 23,000 mil2will be described. Typical memory access is 200ns with 450mW power dissipation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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