2-D numerical simulation of the charge transfer in GaAs B.C.C.D.'s in the GHz range

Autor:	J. Godin, D. Rigaud, D. Sodini, A. Touboul
Rok vydání:	1985
Předmět:	Range (particle radiation) Materials science Computer simulation business.industry Clock rate General Engineering Oxide Schottky diode Charge (physics) Epitaxy chemistry.chemical_compound chemistry Transfer (computing) Hardware_INTEGRATEDCIRCUITS Optoelectronics business
Zdroj:	Physica B+C. 129:568-572
ISSN:	0378-4363
DOI:	10.1016/0378-4363(85)90646-1
Popis:	In order to obtain the transfer inefficiency of GaAs BCCD's operated in the GHz range, a numerical simulation of their behaviour is presented. The influence of the technology (3 and 4 phases devices, epitaxial or ion-implanted channel, Schottky or MIS gates) and of electrical parameters (clock frequency, interelectrodes gaps, oxide charges) on the transfer inefficiency is studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0501e8dc90d438031cad32b29e2ec727 https://doi.org/10.1016/0378-4363(85)90646-1 Zobrazit plný text záznamu