Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effect
| Autor: | S. P. Neo, J.C. Lam, G. B. Ang, S. L. Ting, C. W. Soo, H. H. Ma, C. Q. Chen, A. C. T. Quah, Z. H. Mai, D. Nagalingam |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science Yield (engineering) business.industry 020209 energy Photovoltaic system Electrical engineering Failure mechanism 02 engineering and technology Root cause Condensed Matter Physics Fault (power engineering) Residual 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business p–n junction |
| Zdroj: | Microelectronics Reliability. :255-260 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2017.07.036 |
| Popis: | This paper described a low yield case which resulted in a donut shape failing pattern. It also described a scenario where static fault localization is ineffective and a systematic problem solving approach based on symptoms, induction, hypothesis and verification was engaged to resolve the issue with understanding on the root cause and the failure mechanism. The low yield is due to residual light in the dilute HF clean tool which results in photovoltaic electrochemical effect on the exposed metal, through via holes, connecting to large PN junction. This results in subsequent resistive via formation and analogue failure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect