Thermal annealing of InAs quantum dots on patterned GaAs substrates

Autor:	M. Helfrich, J. Hendrickson, D. Rülke, H. Kalt, M. Hetterich, G. Khitrova, H. Gibbs, S. Linden, M. Wegener, D. Z. Hu, D. M. Schaadt, Jisoon Ihm, Hyeonsik Cheong
Rok vydání:	2011
Předmět:	Condensed Matter::Materials Science Materials science Condensed matter physics Condensed Matter::Other Quantum dot Atomic force microscopy Annealing (metallurgy) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Merge (version control) Molecular beam epitaxy
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.3666332
Popis:	We investigated the effect of in‐situ thermal annealing on InAs quantum dots (QDs) grown site‐selectively on pre‐patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::04e37173e0fb90d124baa0a0d168662e https://doi.org/10.1063/1.3666332 Zobrazit plný text záznamu