Thickness-scaling of sputtered PZT films in the 200 nm range for memory applications
| Autor: | J.C. Lee, C. Sudhama, Vinay Chikarmane, Rajesh Khamankar, Jiyoung Kim |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
business.industry Mineralogy Sputter deposition Condensed Matter Physics Microstructure Ferroelectricity Electronic Optical and Magnetic Materials Stress (mechanics) Hysteresis Cavity magnetron Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film business Perovskite (structure) |
| Zdroj: | Journal of Electronic Materials. 23:1261-1268 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02649888 |
| Popis: | In this paper, we present electrical and material properties of thin films (100 to 400 nm) of magnetron-sputtered ferroelectric PZT for memory applications. The optimal lead-compensation power (and the resulting film composition) is independent of film-thickness. Reduction of film-thickness leads to a reduction in the crystallization temperature (from 700°C for 400 nm films to 575°C for 100 nm films), and yields evidence for a two-step growth of perovskite rosettes. An optimized 100 nm film yields 12 μC/cm2 for 1.5V operation and fatigues by 25% after 1010 unipolar stress cycles. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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