Titanium implantation profiles in silicon using metal plasma-based ion implantation technique

Autor:	Yuji Horino, Kazuto Ohno, Shinzo Yoshikado, Yasuo Suzuki, Shunji Kurooka, Ken Yukimura, Masao Koto, Akiyoshi Chayahara, Atsushi Kinomura
Rok vydání:	1998
Předmět:	Materials science Silicon Analytical chemistry chemistry.chemical_element Plasma Substrate (electronics) Vacuum arc Condensed Matter Physics chemistry.chemical_compound Ion implantation X-ray photoelectron spectroscopy chemistry Silicide General Materials Science Titanium
Zdroj:	Materials Chemistry and Physics. 54:127-130
ISSN:	0254-0584
Popis:	We have carried out preliminary studies of a plasma-based ion implantation technique which utilizes a vacuum arc produced metal plasma. Depth profiles of titanium implanted into silicon have been analysed by XPS and RBS. Titanium concentration in the silicon substrate increased proportionally to the repetition frequency. As the applied pulse voltage increased, the depth of titanium implantation increased. The titanium was found to a depth of up to 1.0×10 18 atoms cm −2 in the silicon substrate, and the dose was estimated to be about 10 16 ~ 10 17 cm −2 . A mixed layer of titanium and silicon was produced. RBS analysis indicated a possibility for titanium and silicon in the mixed layer to form a silicide structure upon heating of the substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::04db14dd5b19245fa77f5b847c19985e https://doi.org/10.1016/s0254-0584(98)00021-2 Zobrazit plný text záznamu Full Text from ScienceDirect